International Journal of Physics | Vol. 11, No. 12, December 2020 | pp. 89–96
DOI: 10.46882/2020/IJP/000128
Research Article
Title: Topological Insulator States and Spin-Orbit Transport anomalies in Functionalized Antimonene Monolayers
Names of Authors: J. W. Park¹, E. C. Vance²
Authors’ Affiliations:
¹ Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon, South Korea
² Department of Physics, University of California, Berkeley, California, USA
Abstract: Developing novel two-dimensional atomic frameworks that house large electronic energy gaps is a focal research directive for realizing ambient-temperature spintronic devices and dissipationless circuitry networks. This study evaluates topological insulator states and maps spin-orbit transport anomalies inside functionalized antimonene (Sb) monolayers. We performed relativistic tight-binding electronic structure modeling across the hexagonal Brillouin zone, incorporating local chemical decoration patterns. The calculations show that strong intrinsic spin-orbit coupling cross-links the valence and conduction bands, lifting state degeneracies at the high-symmetry boundaries to establish a wide topological bulk bandgap of 0.28 eV. The system reports a non-zero spin Chern number of Cs = +1, confirming strong quantum spin Hall configurations. We simulated spin-polarized electron wavepacket transport properties past single-atom missing vacancies and edge boundary roughness. The helical edge modes bypassed these structural disruptions with an absolute transmission efficiency calculation of 99.5% ± 0.2%, showing an complete suppression of backscattering losses protected by time-reversal symmetry guidelines.
Keywords: Antimonene; topological insulators; spin-orbit coupling; quantum spin Hall effect; edge states; spintronics
Manuscript Timeline: Received: August 18, 2020; Revised: October 10, 2020; Accepted: November 02, 2020; Published: December 15, 2020
Citation: Park, J. W., & Vance, E. C. (2020). Topological Insulator States and Spin-Orbit Transport anomalies in Functionalized Antimonene Monolayers. International Journal of Physics, 11(12), 89–96.
International Journal of Physics | Vol. 11, No. 11, November 2020 | pp. 81–88
DOI: 10.46882/2020/IJP/000127
Research Article
Title: Elasticity Metrics and Structural Phase Transformations in Ultra-Incompressible Zirconium Tetraboride
Names of Authors: V. I. Morozov¹, O. B. Ivanov²
Authors’ Affiliations:
¹ Institute of High Pressure Physics, Russian Academy of Sciences, Troitsk, Russia
² L.D. Landau Institute for Theoretical Physics, Russian Academy of Sciences, Chernogolovka, Russia
Abstract: Synthesis of ultra-incompressible structural compounds capable of retaining mechanical integrity under ultra-high shear loads is essential for manufacturing industrial abrasive bits and deep-mantle anvil components. This paper investigates high-pressure elasticity metrics and models structural phase transformations in orthorhombic zirconium tetraboride (ZrB4) up to hydrostatic limits of 150.0 GPa. We performed first-principles density functional theory computations incorporating generalized gradient approximations across compressed lattice geometries. At zero pressure, the calculated bulk modulus is B0 = 295.0 GPa, with an elastic pressure derivative coefficient of B0' = 4.12, matching experimental diamond cell records within a narrow 1.2% margin. The single-crystal elastic tensors (C11, C22, C33, C44, C55, and C66) climb monotonically under compression paths, strictly matching all Born mechanical stability conditions across the tested pressure window. Spatial compressibility profiles indicate that the crystal c-axis displays enhanced rigidity due to short, highly covalent boron-boron networks interlocking the metal rows. Electronic band-structure maps verify a persistent density of states at the Fermi boundary, proving that ZrB4 preserves metallic conductivity indicators under ultra-high pressures.
Keywords: Zirconium tetraboride; density functional theory; elastic constants; high pressure; mechanical stability; directional compressibility
Manuscript Timeline: Received: July 12, 2020; Revised: September 04, 2020; Accepted: September 22, 2020; Published: November 13, 2020
Citation: Morozov, V. I., & Ivanov, O. B. (2020). Elasticity Metrics and Structural Phase Transformations in Ultra-Incompressible Zirconium Tetraboride. International Journal of Physics, 11(11), 81–88.
International Journal of Physics | Vol. 11, No. 10, October 2020 | pp. 73–80
DOI: 10.46882/2020/IJP/000126
Research Article
Title: Optical Soliton Instabilities and Self-Focusing Control in Highly Non-Local Nematic Liquid Crystals
Names of Authors: L. K. Rousseau¹, K. Y. Tanaka²
Authors’ Affiliations:
¹ Laboratoire de Physique des Plasmas, École Polytechnique, Palaiseau, France
² Department of Materials Science, Tokyo Institute of Technology, Tokyo, Japan
Abstract: Managing high-power laser beam propagation profiles and eliminating catastrophic optical filamentation are vital for developing long-range optical links, light-induced waveguides, and compact signal-switching chips. This study models optical soliton instabilities and characterises self-focusing control fields inside nematic liquid crystal cells exhibiting highly non-local thermal reorientational non-linearities. We solved the coupled non-linear Schrödinger and director orientation equations using a variational mathematical approach paired with split-step Fourier numerical simulations. The analytical models establish the exact power thresholds and phase-matching metrics required to launch stable two-dimensional spatial solitary waves. The results prove that increasing the non-local elastic response length from 1.0 mm to 4.5 nm suppresses structural collapse nodes by smoothing localized wavefront phase errors. The modulation instability growth rate was tracked against changing spatial perturbation frequencies, highlighting a maximum gain coefficient of g = 3.18 cm^-1 under an input beam intensity of 2.5 kW/cm². Expanding the non-locality parameter scales down the maximum instability gain by 62.0% and shifts the peak response toward longer modulation wavelengths, effectively avoiding filamentation risks.
Keywords: Nonlinear optics; spatial solitons; nematic liquid crystals; modulation instability; wave collapse; split-step Fourier method
Manuscript Timeline: Received: June 02, 2020; Revised: July 29, 2020; Accepted: August 25, 2020; Published: October 08, 2020
Citation: Rousseau, L. K., & Tanaka, K. Y. (2020). Optical Soliton Instabilities and Self-Focusing Control in Highly Non-Local Nematic Liquid Crystals. International Journal of Physics, 11(10), 73–80.
International Journal of Physics | Vol. 11, No. 9, September 2020 | pp. 65–72
DOI: 10.46882/2020/IJP/000125
Research Article
Title: Quantum Entanglement Kinetics and Phase Decoupling in Driven Hybrid Quantum-Dot Cavity Systems
Names of Authors: S. H. Zhang¹, M. S. Al-Rashid²
Authors’ Affiliations:
¹ Department of Physics, Tsinghua University, Beijing, China
² Department of Physics, King Abdulaziz University, Jeddah, Saudi Arabia
Abstract: Preserving non-classical correlations against localized environmental fluctuations is a primary operational objective in developing high-fidelity solid-state quantum computation arrays. This paper investigates the time-dependent kinetic evolution of quantum entanglement and presents active phase decoupling strategies within driven hybrid quantum-dot cavity systems. The model comprises a multi-level semiconductor quantum dot embedded in a microdiscoid resonator interacting with a discrete thermal acoustic phonon bath. We solved the density matrix master equations using an algebraic operator framework matching the Lindblad dissipation rules at a cryogenic operating condition of 4.2 K. The calculations demonstrate that modulating the external laser fields to satisfy multi-photon resonance profiles effectively shelters the electronic states from radiative cavity mirror leaks. This isolation sustains stable bipartite entanglement across continuous runtime blocks exceeding 20.0 ns, preserving a concurrence index above 0.85. We simulated a periodic dynamical phase-reversal pulse sequence that dampens low-frequency charge noise channels. This optimization yields a target quantum phase gate fidelity calculation of 99.4% ± 0.2%. These structural and kinetic parameters assist engineers in configuring stable, noise-immune solid-state registers for distributed quantum data networks.
Keywords: Quantum entanglement; quantum dots; Lindblad master equation; dynamical decoupling; cavity electrodynamics; quantum computing
Manuscript Timeline: Received: May 14, 2020; Revised: July 08, 2020; Accepted: August 03, 2020; Published: September 10, 2020
Citation: Zhang, S. H., & Al-Rashid, M. S. (2020). Quantum Entanglement Kinetics and Phase Decoupling in Driven Hybrid Quantum-Dot Cavity Systems. International Journal of Physics, 11(9), 65–72.
International Journal of Physics | Vol. 11, No. 8, August 2020 | pp. 57–64
DOI: 10.46882/2020/IJP/000124
Research Article
Title: Superconducting Phase Transitions and Magnetic Flux Pinning Mechanisms in Titanium-Nitride Thin Films
Names of Authors: O. K. Semenov¹, D. L. Santos²
Authors’ Affiliations:
¹ Institute for Solid State Physics, Russian Academy of Sciences, Moscow, Russia
² Department of Physics, University of Coimbra, Coimbra, Portugal
Abstract: Enhancing the current-carrying capability of superconductors under strong magnetic fields is a critical requirement for next-generation superconducting quantum circuits and highly sensitive photon detectors. This study evaluates the superconducting phase transitions and maps magnetic flux pinning mechanisms in titanium-nitride (TiN) thin films. The thin films were prepared via magnetron sputtering on sapphire substrates with film thicknesses ranging from 50.0 nm to 300.0 nm. We conducted low-temperature electrical transport and magnetometry measurements across a temperature range of 1.5 K to 10.0 K under magnetic fields up to 6.0 T. The pristine 300.0 nm film displayed a sharp superconducting transition with a critical temperature (Tc) of 5.2 K at zero field. Magnetization loops revealed a high critical current density (Jc) exceeding 1.8 x 10^6 A/cm² at 2.0 K. Analysis of the pinning force density indicates that the dominant pinning mechanism shifts from core-surface pinning to point-defect pinning as the temperature approaches Tc. The upper critical field, Hc2(0), was estimated to be 7.4 T by applying the Werthamer-Helfand-Hohenberg theoretical model. These findings demonstrate that nanoscale grain boundary control significantly improves vortex lattice stability, offering structural strategies for device optimizations.
Keywords: Superconductivity; thin films; flux pinning; critical current density; upper critical field; magnetron sputtering
Manuscript Timeline: Received: April 05, 2020; Revised: June 01, 2020; Accepted: June 28, 2020; Published: August 14, 2020
Citation: Semenov, O. K., & Santos, D. L. (2020). Superconducting Phase Transitions and Magnetic Flux Pinning Mechanisms in Titanium-Nitride Thin Films. International Journal of Physics, 11(8), 57–64.
International Journal of Physics | Vol. 11, No. 7, July 2020 | pp. 49–56
DOI: 10.46882/2020/IJP/000123
Research Article
Title: Thermal Dispersion Metrics and Phonon Wavepacket Scattering at Silicon-Nitride Interfacial Defect Layers
Names of Authors: M. G. Richter¹, S. P. Nair²
Authors’ Affiliations:
¹ Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany
² Department of Physics, University of Kerala, Trivandrum, India
Abstract: Minimizing thermal transport across semiconductor boundary layers is crucial for designing high-efficiency solid-state thermoelectric cooling devices and optimizing microelectronic heat sinks. This paper uses molecular dynamics simulations to quantify thermal dispersion metrics and track phonon wavepacket scattering at defective silicon-nitride (Si-Si3N4) interfaces. We constructed atomistic models using the optimized Tersoff potential, incorporating varying concentrations of interfacial point defects and atomic roughness steps. Longitudinal and transverse acoustic phonon wavepackets were generated with narrow frequency spreads centered between 2.0 THz and 8.0 THz. The computational data demonstrate that high-frequency acoustic phonons (f greater than 5.0 THz) undergo strong diffuse scattering at the rough interface, dropping the transmission coefficient from 0.85 down to 0.22. This diffuse scattering is driven by localized strain fields and localized interface vibrational modes. The overall interfacial thermal conductance was calculated to decrease by 48.0% when the interfacial roughness parameter scaled from 0.1 nm to 0.6 nm at 300.0 K. These molecular dynamics calculations clarify the atomic-scale mechanisms restricting heat carrier propagation, helping engineers design targeted thermal barriers for nanoscale electronics.
Keywords: Thermal dispersion; phonon wavepacket; molecular dynamics; interface roughness; thermoelectric cooling; nitride interfaces
Manuscript Timeline: Received: March 11, 2020; Revised: May 19, 2020; Accepted: June 11, 2020; Published: July 09, 2020
Citation: Richter, M. G., & Nair, S. P. (2020). Thermal Dispersion Metrics and Phonon Wavepacket Scattering at Silicon-Nitride Interfacial Defect Layers. International Journal of Physics, 11(7), 49–56.