International Journal of Physics | Vol. 17, No. 8, August 2026 | pp. 65–72
DOI: 10.46882/2026/IJP/000197
Research Article
Title: Anisotropic Magnetoresistance and Electronic Structure of Cobalt-Doped Monolayer Molybdenum Disulfide
Names of Authors: M. R. Al-Mansoor¹, S. J. Thornton², A. L. Rostov³
Authors’ Affiliations:
¹ Department of Physics, Condensed Matter Research Laboratory, University of Cambridge, Cambridge, UK
² Centre for Advanced Materials Science, Monash University, Melbourne, Australia
³ Institute of Solid State Physics, Russian Academy of Sciences, Moscow, Russia
Abstract: This study investigates the anisotropic magnetoresistance (AMR) and electronic band structure of cobalt-doped monolayer molybdenum disulfide (MoS²) synthesized via chemical vapor deposition. We deposited films with varying cobalt concentrations (from 1.0% to 7.0% atomic weight) on strontium titanate substrates. X-ray diffraction patterns confirmed a high-quality phase with no visible secondary phase segregations. Electrical transport measurements were conducted across a wide temperature range from 2.0 K to 300.0 K. A maximum negative magnetoresistance of 4.5% was observed at 5.0 K under an applied magnetic field of 5.0 T. This magnetotransport behaviour decreases monotonically as the temperature increases toward room temperature. Density functional theory calculations indicate that the cobalt 3d states hybridize significantly with the molybdenum 3d and sulfur 3p bands. This hybridization induces a spin-polarized density of states at the Fermi level. The spin polarization value was calculated to be approximately 42.0% for the 5.0% cobalt-doped sample. Optical absorption spectroscopy revealed a systematic redshift in the optical band gap from 1.85 eV to 1.65 eV with increasing cobalt content. This shift confirms the substitution of molybdenum ions by cobalt ions within the crystal lattice. Hall effect measurements revealed n-type carrier concentrations ranging from 1.2 x 10¹⁹ to 4.8 x 10²⁰ cm⁻³. These findings suggest that the observed ferromagnetism is carrier-mediated, aligning with the bound magnetic polaron model. The robust spin-polarized transport properties identified in these dilute magnetic semiconductor films make them highly viable candidates for room-temperature spintronic applications.
Keywords: Dilute magnetic semiconductors; Monolayers; Magnetoresistance; Spintronics; Density functional theory; Band gap tuning
Manuscript Timeline: Received: April 12, 2026 / Revised: May 24, 2026 / Accepted: June 15, 2026 / Published: August 14, 2026
Citation: Al-Mansoor, M. R., Thornton, S. J., & Rostov, A. L. (2026). Anisotropic Magnetoresistance and Electronic Structure of Cobalt-Doped Monolayer Molybdenum Disulfide. International Journal of Physics, 17(8), 65–72.
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