International Journal of Physics | Vol. 3, No. 11, November 2012 | pp. 83–90
DOI: 10.46882/2012/IJP/000031
Research Article
Title: Hydrodynamic Transport and Plasma Instabilities in Dual-Gated Graphene Field-Effect Transistors
Names of Authors: J. R. Weber¹, M. T. Nguyen²
Authors’ Affiliations: ¹Physik-Department, Technische Universität München, D-85748 Garching, Germany; ²Department of Physics, Vietnam National University, Hanoi 100000, Vietnam
Abstract: Relativistic-like charge carrier dynamics in high-mobility graphene layers enable strong hydrodynamic fluid flow regimes under specific conditions. This paper characterizes the electronic hydrodynamic transport properties and evaluates Dyakonov-Shur plasma wave instabilities inside dual-gated graphene field-effect transistors. We solved the coupled Navier-Stokes equations for two-dimensional electron gases. This system was integrated alongside the Poisson electrostatic equation to account for self-consistent electric fields. The calculations show that when drift velocities exceed the threshold parameter of v = 2.5 * 10⁷ cm/s, electron-electron scattering mechanisms become dominant over impurity scattering channels. This dominance leads to a steady viscous fluid flow state. Under asymmetric boundary configurations across the source and drain terminals, plasma wave oscillations exhibit a net amplification profile. This amplification delivers a negative differential resistance response within the terahertz frequency spectrum of 1.2 THz to 3.5 THz. The calculated resonant frequency values tune continuously via the applied gate voltage parameters with a wide sensitivity factor of 450 GHz/V. These results provide design strategies for constructing high-output, room-temperature terahertz radiation sources and detectors using graphene architectures.
Keywords: Graphene transistor; hydrodynamic transport; plasma instability; terahertz radiation; Navier-Stokes equations; electron-electron scattering
Manuscript Timeline: Received: August 19, 2012; Revised: September 25, 2012; Accepted: October 10, 2012; Published: November 13, 2012 [1]
Citation: Weber, J. R., & Nguyen, M. T. (2012). Hydrodynamic Transport and Plasma Instabilities in Dual-Gated Graphene Field-Effect Transistors. International Journal of Physics, 3(11), 83–90.
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